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师资力量

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  • 姓名:

    李震

  • 职称职务:

    副教授

  • 专业方向:

    先进存储器及系统

  • 电话:

    027-87559364

  • 电邮:

    lizhen@mail.hust.edu.cn

  • 地址:

    武汉光电国家实验室B506,西一楼118

基本信息

主要从事信息存储材料、器件和芯片研究,包括相变随机存储器、光存储、阻变随机存储器、忆阻器等,以及相应的存储器件测试技术,参与了国家863重大项目子课题,国家863面上项目,国家国际科技合作项目,湖北省重大科技攻关项目等。发表论文三十多篇,获授权专利六项。

科研成果

近五年来主要论文:

 

(1)     Ri Wen Ni, Bi Jian Zeng, Jun Zhu Huang, Teng Luo, Zhen Li*, Xiang Shui Miao, Exposure strategy and crystallization of Ge-Sb-Te thin film by maskless phase-change lithography, Optical Engineering 54(4), 045103 (April 2015).

(2)     Zeng BJHuang JZNi RWYu NNWei WHu YZLi ZMiao XS, Metallic resist for phase-change lithography,  Scientific Reports (Nature Publishing Group), volume 4, 5300, 2014. 

(3)     Q. He, Z. Li*, J. H. Peng, Y. F. Deng, B. J. Zeng, W. Zhou, and X. S. Miao, Continuous controllable amorphization ratio of nanoscale phase change memory cells, Applied Physics Letters, 104, 223502, 2014.  

(4)     Bi Jian Zeng, Ri Wen Ni, Jun Zhu Huang, Zhen Li*and Xiang Shui Miao, Polarization-based multiple-bit optical data storage, J. Opt. 16(2014) 125402 (7pp).

(5)     Deng Y. F., Li Z*.,Peng J. H., Liu C., Chen W., Miao X.S.,Thermal dispersion and secondary crystallization of phase change memory cells, Applied Physics Letters, 103(23), 233501, 2013.  

(6)     P. Wang, C. Ju, W. Chen, D. Q. Huang, X. W. Guan, Z. Li, X. M. Cheng, and X. S. Miao, Picosecond amorphization of chalcogenides material: From scattering to ionization, Applied Physics Letters, 102(11), 112108, 2013.

(7)      Chen W, Li Z*, Peng JH, Deng YF, Miao XS, Intrinsic threshold mechanism of phase-change memory cells by pulsed current–voltage characterization, Applied Physics Letters, 101(14), 142107, 2012.  

(8)     Huang DQ, Miao XS,  Li Z, Sheng JJ, Sun JJ, Peng JH, Wang JH, Chen Y,  Long XM, Nonthermal phase transition in phase change memory cells induced by picosecond electric pulse, Applied Physics Letters, Volume: 98, Issue: 24, Article Number: 242106, JUN 13 2011

(9)     L.W. Qu, X.S. Miao, J.J. Sheng, Z. Li, J.J. Sun, P.An, Jiandong Huang, Daohong Yang, Chang Liu, SET/RESET properties dependence of phase-change memory cell on thickness of phase-change layer, Solid-State Electronics 56 (2011) 191–195.

(10)  B. J. Zeng, J. Z. Huang, Z. Li, X. S. Miao, Phase-Change Lithography based on Metallic Glass Thin Film, International Symposium on Photoelectronic Detection and Imaging (ISPDI ), Beijing, JUN2013 (Invited talk)

(11)  X. S. Miao, B. J. Zeng, Z. Li, W. L. Nanopatterning by Phase Change Nanolithography, Zhou, 7th IEEE International Conference on Nano/Micro Engineered and Molecular Systems (IEEE-NEMS 2012), MAR2012 (Invited talk)

(12)  B. J. Zeng, X. S. Miao, Z. Li, W. L. Zhou, Phase Change Lithography and Wet-etching Based on Metallic Glass Materials, International Symposium on Optical Memory (ISOM), Japan, SEP 2012(Invited talk)

(13)  X. S. Miao, W. L. Zhou, X. M. Cheng and Z. Li, Nonvolatile Phase Change Random Access Memory, International Symposium on Advanced Nanomaterials and Nanosystems (ANN2010), Japan, MAY 2010 (Invited talk)

主要经历

1987年毕业于华中理工大学,2000年在华中科技大学材料物理与化学专业获硕士学位,2006年在华中科技大学微电子学与固体电子学获工学博士学位。目前,在华中科技大学光学与电子信息学院微电子学系信息存储材料及器件研究所从事本科生和研究生教学、科研工作。

研究方向

微电子学与固体电子学

信息存储材料、器件及芯片系统

光存储器件

电子器件测试技术

大规模集成电路测试技术