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  • 姓名:

    缪向水

  • 职称职务:

    教授、副院长

  • 专业方向:

    先进存储器及系统

  • 电话:

    027-87792091

  • 电邮:

    miaoxs@mail.hust.edu.cn

  • 地址:

    武汉光电国家实验室C406,西一楼118

基本信息

缪教授是国务院享受政府特殊津贴专家,教育部长江学者特聘教授,中国仪表功能材料学会副理事长,IEEE Nanotechnology Magazine杂志的技术编辑。他还是华中科技大学校学术委员会委员,  华中科技大学光学与电子信息学院微电子学系主任、信息存储材料及器件研究所所长,

缪教授主要从事相变存储器、忆阻器、磁存储器、光存储等信息存储材料与器件领域的研究。近5年来主持承担了国家863重大项目子课题、863面上项目、国家国际科技合作项目、国家自然科学基金面上项目、湖北省重大科技攻关项目等15项科研项目。目前共发表论文200余篇,其中被SCI收录100余篇。申请国际发明专利15项,国内专利45项。曾荣获2004年年度唯一的新加坡国家技术奖,1998年和1992年中国国家科技进步三等奖等。

教学情况:本科生课程《固体物理》,硕士研究生课程《半导体材料与器件》,博士研究生课程《微电子学进展》。

科研成果

Publications:  


1.   Nonvolatile ‘AND’ ‘OR’ ‘NOT’ Boolean Logic Gates Based on Phase-Change Memory, Y. Li, Y. P. Zhong, Y. F. Deng, Y. X. Zhou, L. Xu and X. S. Miao, Journal of Applied Physics, 114, 234503 ,2013    

2.   Thermal dispersion and secondary crystallization of phase change memory cells, Deng Y. F., Li Z., Peng J. H., Liu C., Chen W., Miao X.S., Applied Physics Letters, 103(23), 233501, 2013  

3.   Effects of deposition profiles on RF-sputtered Cu(In,Ga)Se2 films at low substrate temperature, Applied Surface Science, Huang X., Miao X. S., Yu N. N., Guan X. W., Volume 287, Pages 257-262, 2013 

4.   Inductively coupled plasma etching for phase-change material with superlattice-like structure in phase change memory device, Jiao ZhouYing ChenWenli Zhou, Xiangshui Miao, Zhe YangNiannian YuHui LiuTian LanJunbing YanApplied Surface ScienceVolume 280, Pages 862–867,2013   

5.   Phase separation and nanocrystallization behavior above crystallization temperature in Mg–Cu–Y metallic glass thin film, G. Wu, Q.H. Tang, N.N. Yu, X.S. Miao, Thin Solid Films, Volume 545, Pages 38-43, 2013 

6.   Nitrogen-induced local spin polarization in graphene on cobalt, Zhongping Chen, Ling Miao, Xiangshui Miao, Journal  of Magnetism and Magnetic Materials 342, Pages 144–148, 2013    

7.   Local order of Ge atoms in amorphous GeTe nanoscale ultrathin films, Yu N.N.Tong H.Zhou J.Elbashir A.A.,Miao X.S., Applied Physics Letters, 103(6), 061910, 2013     

8.   Intrinsic memristance mechanism of crystalline stoichiometric Ge2Sb2Te5, Li Y.Zhong Y.P.Zhang J.J.Xu X.H.,  Wang Q.Xu  L, Sun  H.J.Miao X.S., Applied Physics Letters,103(4), 043501, 2013  

9.   AgInSbTe memristor with gradual resistance tuning, Zhang J.J.Sun H.J.Li Y.Wang Q.Xu X.H.Miao X.S., Applied Physics Letters,102(18), 183513, 2013   

10.  Picosecond amorphization of chalcogenides material: From scattering to ionization, Wang, P. Ju, C., Chen, W,Huang, D.Q, X. S. Miao, Applied Physics Letters, 102(11), 112108, 2013   

11.  Ferromagnetism and electronic transport in epitaxial Ge1-xFexTe thin film grown by pulsed laser deposition,Liu, J.D.Miao, X.S. ; Tong, F. ; Luo, W. ; Xia, Z.C., Applied Physics Letters, 102(10), 102402,2013  

12.  Ultrafast synaptic events in a chalcogenide memristor, Y. Li, Y. P. Zhong, L. Xu, J. J. Zhang, X. H. Xu, H. J. Sun, X. S. Miao, Scientific Reports (Nature Publishing Group), volume 3, 1619,2013.      

13.  A high speed asymmetric T-shape cell in NMOS-selected phase change memory chip, J.H. WangJ. ZhouW.L. Zhou,H. TongD.Q. HuangJ.J. SunL. ZhangX.M. LongY. ChenL.W. QuX.S. MiaoSolid-State ElectronicsVolume 81, Pages 157–162, 2013     

14.  Effect of Sputtering Parameters on the Magnetic Properties of SmCo5/Cu Films, W.M. ChengH. HuY.F. DaiX.M. Cheng & X.S. Miao, Materials and Manufacturing Processes, Volume 28Issue 5, pages505-508,  2013   

15.  Electrode Materials for Ge2Sb2Te5-Based Memristors, Wang Q, Sun HJ, Zhang JJ, Xu XH, Miao XS, JOURNAL OF ELECTRONIC MATERIALS, 41(12), 3417-3422 (2012).

16.  Intrinsic threshold mechanism of phase-change memory cells by pulsed current–voltage characterization, Chen W, Li Z, Peng JH, Deng YF, Miao XS, APPLIED PHYSICS LETTERS, Volume: 101, Issue: 14, Article Number: 142107,  OCT 2012.

17.  A new TiW seedlayer for SmCo5 films with perpendicular magnetic anisotropy, Cheng WM, Liu WW, Wang X, Cheng XM, Miao XS, JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, Volume:324, Issue:22, Pages: 3658-3661,NOV 2012.

18.  Effect of Cu substitution on the magnetic properties of SmCo5 film with perpendicular magnetic anisotropy, JOURNAL OF ELECTRONIC MATERIALS, Cheng WM, Dai YF, Hu H, Cheng XM, Miao XS, Volume: 41,  Issue: 8, Pages: 2178-2183,  AUG 2012.

19.  Magnetic moments in SmCo5 and SmCo5Cu films, Cheng WM, Zhao SH, Cheng XM, Miao XS, JOURNAL OF SUPERCONDUCTIVITY AND NOVEL MAGNETISM, Volume: 25,  Issue: 6, Pages: 1947-1950, JUN 2012.

20.  Amorphization and amorphous stability of Bi2Te3 chalcogenide films, Ju C, Cheng XM, Miao XS, APPLIED PHYSICS LETTERS, Volume: 100,  Issue: 14, Article Number: 142114,  APR 2012.

21.  Phonon Properties and Low Thermal Conductivity of Phase Change Material with Superlattice-Like Structure, Long PY,  Tong H, Miao XS, APPLIED PHYSICS EXPRESS, Volume: 5, Issue: 3, Article Number: 031201,  MAR 2012.

22.  Dynamic switching characteristic dependence on sidewall angle for phase change memory, Long XM, Miao XS, Sun JJ,  Cheng XM, Tong H, Li Y,  Yang DH, Huang  JD,  Liu C,  SOLID-STATE ELECTRONICS, Volume: 67, Issue: 1,  Pages: 1-5, JAN 2012.

23.  Insulator-metal transition in GeTe/Sb2Te3 multilayer induced by grain growth and interface barrier, Tong H, Miao XS,  Yang Z, Cheng XM, APPLIED PHYSICS LETTERS, Volume: 99, Issue: 21, Article Number: 212105, NOV 21 2011

24.  Anomalous second ferromagnetic phase transition as a signature of spinodal decomposition in Fe-doped GeTe diluted magnetic semiconductor,  Tong F,  Hao JH, Chen ZP, Gao GY, Tong H, Miao XS, APPLIED PHYSICS LETTERS,  Volume: 99,  Issue: 20,  Article Number: 202508, NOV 14 2011

25.  Phase-change control of ferromagnetism in GeTe-based phase change magnetic thin-films by pulsed laser deposition,  Tong F, Hao JH, Chen ZP,  Gao GY, Miao XS, APPLIED PHYSICS LETTERS, Volume: 99, Issue: 8, Article Number: 081908, AUG 22 2011

26.  Nonthermal phase transition in phase change memory cells induced by picosecond electric pulse, Huang DQ, Miao XS,  Li Z, Sheng JJ, Sun JJ, Peng JH, Wang JH, Chen Y,  Long XM, APPLIED PHYSICS LETTERS, Volume: 98, Issue: 24, Article Number: 242106, JUN 13 2011

27.  Half-metallicity of wurtzite NiO and w-NiO/ZnO (0001) interface: First principles simulation, Chen ZP, Miao L,  Miao XS, AIP ADVANCES, Volume: 1, Issue: 2, Article Number: 022124, JUN 2011  

28.  Thermal conductivity of chalcogenide material with superlatticelike structure, Tong H, Miao XS, Cheng XM, Wang H,  Zhang L,  Sun JJ,  Tong F, Wang JH, APPLIED PHYSICS LETTERS, Volume: 98, Issue: 10, Article Number: 101904, MAR 7 2011

29.  SET/RESET properties dependence of phase-change memory cell on thickness of phase-change layer, Qu LW, Miao XS, Sheng JJ, Li Z, Sun JJ, An P, Huang JD, Yang DH, Liu C, SOLID-STATE ELECTRONICS, Volume: 56, Issue: 1,  Pages: 191-195, FEB 2011

30.  Effective method to identify the vacancies in crystalline GeTe, Tong F, Miao XS, Wu Y, Chen ZP, Tong H, Cheng XM,  APPLIED PHYSICS LETTERS, Volume: 97, Issue: 26, Article Number: 261904,  DEC 27 2010

31.  Influences of Substrate Temperature on Structure, Electrical and Optical Properties of Magnetron Sputtering Ge2Sb2Te5 Films, Sun HJ, Hou LS, Miao XS, Wu YQ, RARE METAL MATERIALS AND ENGINEERING,  Volume: 39, Issue: 3, Pages: 377-381, MAR 2010

32.  Advancements in next-generation memory and photonic devices, Miao XS,Shi TL,Zhang XL,Zhao YD,IEEE Nanotechnology Magazine, Volume: 4, Issue: 1, Pages: 4-8, MAR 2010

主要经历

1989年 – 1996年,华中理工大学(现华中科技大学)助教,讲师,副教授

1996 年– 1997年,香港城市大学电子工程系副研究员,材料研究中心研究员

1997年 – 2007年,新加坡国家数据存储研究院高级工程师,主任工程师,3级科学家,4级科学家

2007年–现在,华中科技大学教授,博士生导师

研究方向

信息存储材料及器件